maximum ratings all ratings: t c = 25c unless otherwise speciied. rf power mosfets n - channel enhancement mode 150v 350w 45mhz the arf469a and arf469b comprise a symmetric pair of common source rf power transistors designed for push- pull scientiic, commercial, medical and industrial rf power ampliier applications up to 45 mhz. they have been optimized for both linear and high eficiency classes of operation. ? speciied 150 volt, 40.68 mhz characteristics: ? output power = 350 watts. ? gain = 16db (class ab) ? eficiency = 75% (class c) ? low cost common source rf package. ? low vth thermal coeficient. ? low thermal resistance. ? optimized soa for superior ruggedness. static electrical characteristics symbol bv dss r ds(on) i dss i gss g fs v gs (th) characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) drain-source on-state resistance 1 (v gs = 10v , i d = 15a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 6.5a) gate threshold voltage (v ds = v gs , i d = 1ma) min typ max 500 0.25 0.28 25 250 100 8 2 4 unit volts ohms a na mhos volts symbol v dss v dgo i d v gs p d r jc t j ,t stg t l parameter drain-source voltage drain-gate voltage continuous drain current @ t c = 25c gate-source voltage total power dissipation @ t c = 25c junction to case operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. ratings 500 500 30 30 445 0.28 -55 to 150 300 unit volts amps volts watts c/w c arf469agARF469BG to-264 commonsource 050-4983 rev a 4-2016 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be follow ed. microsemi website - http://www.microsemi.com downloaded from: http:///
0.1 1 10 100 1 10 100 800 10 100 1,000 10,000 0 100 200 300 400 500 dynamic characteristics arf469ag_bg functional characteristics symbol g ps test conditions f = 40.68 mhz v gs = 2.5v v dd = 150v p out = 350w no degradation in output power characteristic common source ampliier power gain drain eficiency electrical ruggedness vswr 10:1 min typ max 14 16 70 75 unit db % 1 pulse test: pulse width < 380s, duty cycle < 2% microsemi reserves the right to change, without notice, the speciications and information contained herein. capacitance (pf) v ds , drain-to-source voltage (volts) figure 1, typical capacitance vs. drain-to-source voltage i d , drain current (a) v ds , drain-to-source voltage (v) figure 3, typical maximum safe operating area c iss c oss c rss 1ms 10ms .1ms 100ms 050-4983 rev a 4-2016 symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 150v f = 1 mhz 2300 c oss output capacitance 250 pf c rss reverse transfer capacitance 125 t c =+25c t j =+175c single pulse operation here limited by r ds (on) typical performance curves 0 1 2 3 4 5 6 7 8 -50 0 50 100 150 t c , case temperature (c) figure 4, typical threshold voltage vs temperature v gs(th) , threshold voltage (normalized) 2018 16 14 12 10 86 4 2 0 0 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (volts) figure 2, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c downloaded from: http:///
arf469ag_bg 050-4983 rev a 4-2016 v ds , drain-to-source voltage (volts) figure 5, typical output characteristics i d , drain current (a) freq. (mhz) z in () z ol () 2.0 13.527.1 40.7 18 - j 10.8 1.3 - j 4.8 0.4- j 2.4 0.2 - j 1.4 30 - j 1.5 26- j 9.6 18 - j 13.112 - j 12.4 z in - gate shunted with 25 i dq = 100ma z ol - conjugate of optimum load for 300 watts output at v dd =150v table 1 - typical class ab large signal input - output impedance typical performance curves 2520 15 10 50 0 5 10 15 20 25 30 5.5v 4.5v 5v 6v v gs =15 & 10v 8v 4v figure 6b, transient thermal impedance model z jc , thermal impedance (c/w) single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 6a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.400.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 0.113 c/w 0.236 c/w 0.0130 f0.147 f power (watts) rc model junctiontemp ( c) case temperature ( c) downloaded from: http:///
arf469ag_bg 050-4983 rev a 4-2016 to - 264 (l) package outline 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. arf - a device arf - b gate drain source source drain gate dimensions in millimeters and (inches) note: these two parts comprise a symmetric pair of rf power transistors and meet the same electrical specifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull p air. l1 c1 r1 r2 dut l2 l3 c3 c4 c7 c6 r3 c2 c8 c9 l4 150v + - rf output rf input typical 40.68 mhz test circuit + - bias0-12v c5 tl1 c1 -- 2200pf atc 700b c2-c5 -- arco 465 mica trimmer c6-c8 -- .1 f 500v ceramic chip c9 -- 3x 2200 pf 500v chips cog l1 -- 4t #22 awg .25"id .25 "l ~87nh l2 -- 5t #16 awg .312" id .35"l ~176nh l3 -- 10t #24 awg .25"id ~.5h l4 -- vk200-4b ferrite choke 3h r1- r3 -- 1k? 0.5? carbon tl1 -- 34 t-line 0.175 x 1 c1 .45" from gate pin. pcb -- 0.062 fr4, er=4.7 downloaded from: http:///
arf469ag_bg 050-4983 rev a 4-2016 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted , distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information con tained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, tra de secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expre ssly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in wri ting signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or impl ied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsem i. it is the customers and users re- sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such informat ion is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/te rms-a-conditions. disclaimer: downloaded from: http:///
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